DocumentCode
2621962
Title
Improved quantization of 2DEG of p-HEMT
Author
Gudimetta, S. ; Shtein, S. Mil
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Lowell, MA, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
524
Lastpage
525
Abstract
The heterostructure potential of a tri-gate depleted mode p-HEMT was modeled for conventional and tailored field operation conditions. The set of energy levels in quantum wells under same bias on all gates were compared with parameters of p-HEMT, when the bias on the gates are varied. To make electron flow in p-HEMT with more coherent energy is documented by modeling and confirmed by experimental measurements of I-V curves and gain.
Keywords
Fermi level; high electron mobility transistors; quantum well devices; semiconductor device models; two-dimensional electron gas; 2DEG; conventional conditions; electron flow; energy levels; heterostructure potential; high electron mobility transistors; quantization; quantum well devices; semiconductor device models; tailored field operation conditions; tri-gate depleted mode p-HEMT; Electrons; Energy measurement; Energy states; Fluid flow measurement; Gain measurement; Optical scattering; Potential energy; Quantization; Shape; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272377
Filename
1272377
Link To Document