Title :
Ion implantation into gallium nitride
Author :
Williams, J.S. ; Tan, H.H. ; Zolper, J.C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Implantation of GaN is important for selective doping and isolation applications. This paper reports on the extreme difficulty in removing ion implantation damage from Si-implanted GaN during annealing up to 1100°C
Keywords :
III-V semiconductors; annealing; gallium compounds; ion implantation; 1100 C; GaN:Si; annealing; gallium nitride; ion implantation; isolation; selective doping; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Ion implantation; Isolation technology; Laboratories; Nitrogen; Rapid thermal annealing; Semiconductor device doping; Temperature distribution;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610149
