Luminescence at 1539 nm from erbium and oxygen implanted GaN

Author

Torvik, J.T. ; Qiu, C.H. ; Feuerstein, R.J. ; Pankove, J.I. ; Namavar, F.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

fYear

1996

fDate

8-11 Dec 1996

Firstpage

394

Lastpage

397

Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted GaN. For device fabrication it is important that the Er-related absorption and emission processes be efficient. Single exponential PL or EL time decays with 1/e lifetimes of 2.33 ms or 1.74 ms indicate a highly efficient radiative process. The absorption process is studied comparing the efficiency of below-bandgap excitation, above-bandgap excitation, and electrical (impact) excitation

Keywords

III-V semiconductors; electroluminescence; erbium; gallium compounds; ion implantation; oxygen; photoluminescence; radiative lifetimes; 1539 nm; GaN:Er,O; above-bandgap excitation; absorption; below-bandgap excitation; device fabrication; efficiency; electrical impact excitation; electroluminescence; emission; implanted GaN; photoluminescence; radiative lifetime; time decay; Erbium; Gallium nitride; Luminescence; Optical attenuators; Optical films; Optical pumping; Oxygen; Particle beam optics; Pulse measurements; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610150

Filename

610150