Title :
Study of the effects of microwave interference on MOSFET devices in CMOS integrated circuits
Author :
Kim, Kyechong ; Iliadis, Agis A. ; Granatstein, Victor
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
In this paper, we focus on the effects on n-channel enhancement mode MOSFET devices where the microwave interference is injected into the input/output leads of the devices. The injected microwave power significantly affects output current, transconductance, output conductance, and breakdown voltage for power levels above 10 dBm in the frequency range between 1 and 20 GHz. The power effects were observed to be suppressed at frequencies above 4 GHz for these devices indicating the possibility of ineffective RF power coupling to devices of this size at the higher frequency range.
Keywords :
CMOS integrated circuits; microwave integrated circuits; semiconductor device breakdown; 1 to 20 GHz; CMOS integrated circuits; RF power coupling; breakdown voltage; microwave interference; n-channel enhancement mode MOSFET devices; power level; transconductance; CMOS integrated circuits; Coupling circuits; Educational institutions; Electromagnetic interference; Integrated circuit packaging; MOSFET circuits; Microwave devices; Physics computing; Protection; Radio frequency;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272381
