Title :
Surface phase diagram for ZnSe MBE growth
Author :
Riley, J. ; Wolfframm, D. ; Westwood, D. ; Evans, A.
Author_Institution :
Sch. of Phys., La Trobe Univ., Bundoora, Vic., Australia
Abstract :
During growth by molecular beam epitaxy the ZnSe surface can exhibit two surface reconstructions, a selenium rich 2×1 surface or a zinc rich c(2×2) surface. The atomic flux ratios and substrate temperatures for which these reconstructions are observed has been determined. A model involving a precursor state will be described which permits the fractional surface coverage to be compared with the surface phase diagram
Keywords :
II-VI semiconductors; molecular beam epitaxial growth; phase diagrams; semiconductor epitaxial layers; semiconductor growth; surface reconstruction; zinc compounds; MBE growth; ZnSe; atomic flux ratio; precursor state; substrate temperature; surface coverage; surface phase diagram; surface reconstruction; Atomic layer deposition; Bonding; Energy states; Image reconstruction; Molecular beam epitaxial growth; Physics; Substrates; Surface reconstruction; Temperature; Zinc compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610152
