The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

Author

Zuo, H.Y. ; Zhou, B. ; Goldys, E.M. ; Paterson, M. ; Tansley, T.L.

Author_Institution

Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

406

Lastpage

409

Abstract

We report on the present status of a systematic investigation of GaN thin films grown on sapphire, semi-insulating GaAs and Si substrates under various pre-growth conditions by low temperature laser and plasma enhanced metal-organic chemical vapour deposition. These pre-growth conditions include deposition of buffer layers and surface hydrogenation

Keywords

III-V semiconductors; chemical vapour deposition; gallium compounds; laser deposition; laser materials processing; plasma CVD; semiconductor growth; semiconductor thin films; substrates; Al₂O₃; GaAs; GaN; GaN thin film; Si; Si substrate; buffer layer; laser enhanced MOCVD; low temperature growth; plasma enhanced MOCVD; sapphire substrate; semi-insulating GaAs substrate; surface hydrogenation; Buffer layers; Gallium arsenide; Gallium nitride; Laser theory; Plasma applications; Plasma temperature; Semiconductor films; Spectroscopy; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610153

Filename

610153