Title :
Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates
Author :
Zhang, Y. ; Usher, B.F. ; Riley, J.D. ; Huang, X. ; Zou, J. ; Leckey, R.C.G. ; Wolffram, D.
Author_Institution :
Sch. of Phys., La Trobe Univ., Bundoora, Vic., Australia
Abstract :
Most II-VI device structures are grown on GaAs substrates. The lattice mismatch which exists between the epilayer and substrate consequently induces a strain in the epilayer. By relating X-ray measurements of distortion and misorientation of the epilayer unit cell to the defect structure at the ZnSe/GaAs interface, we are able to propose a model for the strain relaxation process in the ZnSe/GaAs system
Keywords :
II-VI semiconductors; X-ray diffraction; deformation; interface structure; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; zinc compounds; GaAs substrate; II-VI device; MBE growth; X-ray measurement; ZnSe epilayer; ZnSe-GaAs; distortion; interfacial defect structure; lattice mismatch; misorientation; strain relaxation; Capacitive sensors; Distortion measurement; Electron microscopy; Gallium arsenide; Heterojunctions; Lattices; Optical reflection; Physics; Strain measurement; Zinc compounds;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610154
