Title :
An impedance transformer with silicon RF MEMS switches
Author :
Nithianandam, Jeyasingh
Author_Institution :
Dept. of Electr. & Comput. Eng., Morgan State Univ., Baltimore, MD, USA
Abstract :
An electronically tunable microwave impedance transformer network that is realized with RF microelectromechanical capacitive shunt switches or RF MEMS varactor devices. Scattering parameters of the impedance transformer obtained from HFSS simulations. Finite element electromagnetic calculations is performed using geometry of the actuated MEMS shunt switch. The performance of the proposed device is tested in Serenade circuit simulator and the simulation results that the loss values are low when the resistive loads were greater than 50 ohm.
Keywords :
S-parameters; elemental semiconductors; finite element analysis; impedance convertors; microswitches; microwave switches; semiconductor device models; silicon; varactors; MEMS shunt switch; RF MEMS varactor devices; RF microelectromechanical capacitive shunt switches; Serenade circuit simulation; Si; electronically tunable microwave impedance transformer; finite element electromagnetic calculations; resistive loads; scattering parameters; silicon RF MEMS switches; transformer loss; Circuit simulation; Circuit testing; Impedance; Microwave devices; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Switches; Tunable circuits and devices; Varactors;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272386
