Title :
Gettering of threading dislocations and oxide precipitates in SIMOX material
Author :
Tomozane, Mamoru ; Liaw, H. Ming
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
Summary form only given. Several methods for gettering defects such as threading dislocations and oxide precipitates in SIMOX material are discussed. The multiple implant/anneal cycle technique is very effective in reducing dislocation density. A second technique involves dislocation gettering by hetero-epitaxy. Finally, the elimination of oxide precipitates by hydrogen ambient anneal is discussed
Keywords :
annealing; dislocation density; getters; ion implantation; precipitation; semiconductor technology; semiconductor-insulator boundaries; H2 ambient anneal; SIMOX material; Si-SiO2; Si:O; dislocation density; gettering; hetero-epitaxy; multiple implant/anneal cycle technique; oxide precipitates; threading dislocations; Annealing; Density measurement; Epitaxial layers; Germanium silicon alloys; Gettering; Hydrogen; Implants; Raman scattering; Silicon germanium; Temperature;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69765
