• DocumentCode
    2622123
  • Title

    Gettering of threading dislocations and oxide precipitates in SIMOX material

  • Author

    Tomozane, Mamoru ; Liaw, H. Ming

  • Author_Institution
    Motorola Inc., Phoenix, AZ, USA
  • fYear
    1989
  • fDate
    3-5 Oct 1989
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    Summary form only given. Several methods for gettering defects such as threading dislocations and oxide precipitates in SIMOX material are discussed. The multiple implant/anneal cycle technique is very effective in reducing dislocation density. A second technique involves dislocation gettering by hetero-epitaxy. Finally, the elimination of oxide precipitates by hydrogen ambient anneal is discussed
  • Keywords
    annealing; dislocation density; getters; ion implantation; precipitation; semiconductor technology; semiconductor-insulator boundaries; H2 ambient anneal; SIMOX material; Si-SiO2; Si:O; dislocation density; gettering; hetero-epitaxy; multiple implant/anneal cycle technique; oxide precipitates; threading dislocations; Annealing; Density measurement; Epitaxial layers; Germanium silicon alloys; Gettering; Hydrogen; Implants; Raman scattering; Silicon germanium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1989., 1989 IEEE
  • Conference_Location
    Stateline, NV
  • Type

    conf

  • DOI
    10.1109/SOI.1989.69765
  • Filename
    69765
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2622123