• DocumentCode
    2622230
  • Title

    Preparation of In2O3 thin films by sol-gel process for ozone sensing

  • Author

    Jimenez, C. ; Sun, H.T. ; Wlodarski, W.

  • Author_Institution
    Dept. of Commun. & Electr. Eng., R. Melbourne Inst. of Technol., Vic., Australia
  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    450
  • Lastpage
    453
  • Abstract
    In2O3 thin films on sapphire substrates have been prepared from indium isopropoxide solutions by sol-gel process. Highly sensitive films have been obtained by using aged solutions and 500°C annealing temperature. The electrical resistance increases greatly with increasing ozone concentration in the ppb range. The sol-gel-derived sensors have ozone sensitivity as large as 6 at 45 ppb, and working temperature below 200°C
  • Keywords
    ageing; annealing; gas sensors; indium compounds; ozone; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; 200 C; 500 C; In2O3; In2O3 thin film; O3; ageing; annealing; electrical resistance; indium isopropoxide solution; ozone sensor; sapphire substrate; sol-gel preparation; Acoustic sensors; Annealing; Gases; Sputtering; Substrates; Surface morphology; Temperature sensors; Thin film sensors; Transistors; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610163
  • Filename
    610163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2622230