Title :
A 47 GHz monolithically integrated SiGe push-push oscillator
Author :
Wanner, Robert ; Pfost, Martin ; Lachner, Rudolf ; Olbrich, Gerhard R.
Author_Institution :
Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany
Abstract :
We present a monolithically integrated push-push oscillator, fabricated in a production-near SiGe:C bipolar technology. The planar inductors have been simulated by a three dimensional electromagnetic field solver. The oscillator obtains an output power of 0 dBm at 47 GHz, while the fundamental signal at 23.5 GHz is -39 dBm. The single sideband phase noise level at 1 MHz offset frequency is -104 dbc/Hz.
Keywords :
Ge-Si alloys; bipolar MIMIC; integrated circuit modelling; millimetre wave oscillators; phase noise; semiconductor materials; thin film inductors; 23.5 GHz; 3D EM field solver; 47 GHz; SiGe:C; bipolar oscillator; monolithically integrated oscillator; planar inductors; push-push oscillator; single sideband phase noise; Electromagnetic fields; Frequency; Germanium silicon alloys; Impedance; Inductors; Millimeter wave circuits; Millimeter wave technology; Oscillators; Phase noise; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398154
