Title :
14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS
Author :
Dixian Zhao ; Reynaert, Patrick
Author_Institution :
KU Leuven, Leuven, Belgium
Abstract :
This paper reports a fully integrated 40nm CMOS PA that utilizes a broadband parallel-series power combiner to achieve an output power (POUT) of 20.9dBm with more than 15GHz small-signal 3dB bandwidth (BW-3dB) and 22% PAE at 0.9V supply. The in-band variation of P1dB is only ±0.25dB. This silicon-based PA covers both 71-to-76GHz and 81-to-86GHz bands with uniform gain, output power and PAE.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; elemental semiconductors; millimetre wave power amplifiers; power combiners; silicon; CMOS PA; E-band power amplifier; Si; bandwidth 71 GHz to 76 GHz; bandwidth 81 GHz to 86 GHz; broadband parallel-series power combiner; gain 3 dB; silicon-based PA; size 40 nm; voltage 0.9 V; Broadband communication; Couplings; Impedance; Integrated circuit interconnections; Power amplifiers; Power generation; Transistors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757420
