DocumentCode
262264
Title
14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS
Author
Dixian Zhao ; Reynaert, Patrick
Author_Institution
KU Leuven, Leuven, Belgium
fYear
2014
fDate
9-13 Feb. 2014
Firstpage
248
Lastpage
249
Abstract
This paper reports a fully integrated 40nm CMOS PA that utilizes a broadband parallel-series power combiner to achieve an output power (POUT) of 20.9dBm with more than 15GHz small-signal 3dB bandwidth (BW-3dB) and 22% PAE at 0.9V supply. The in-band variation of P1dB is only ±0.25dB. This silicon-based PA covers both 71-to-76GHz and 81-to-86GHz bands with uniform gain, output power and PAE.
Keywords
CMOS integrated circuits; MMIC power amplifiers; elemental semiconductors; millimetre wave power amplifiers; power combiners; silicon; CMOS PA; E-band power amplifier; Si; bandwidth 71 GHz to 76 GHz; bandwidth 81 GHz to 86 GHz; broadband parallel-series power combiner; gain 3 dB; silicon-based PA; size 40 nm; voltage 0.9 V; Broadband communication; Couplings; Impedance; Integrated circuit interconnections; Power amplifiers; Power generation; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4799-0918-6
Type
conf
DOI
10.1109/ISSCC.2014.6757420
Filename
6757420
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