Title :
High-Q integrated passive elements for high frequency applications
Author :
Peroulis, Dimitris ; Mohammadi, Saeed ; Katehi, Linda P B
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Using MEMS fabrication technology, we have demonstrated very high frequency and high quality factor (Q) varactors, inductors and transformers on a Si substrate. On high resistivity Si, this technology results in broadband analog varactors with continuous tuning range as high as 3:1 and 1 nH inductors with Q>60 at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6res<16 GHz). This technology is compatible with Si fabrication technologies and can be either implemented as a post-processing step or as a part of a vertical chip to interposer packaging scheme.
Keywords :
Q-factor; circuit resonance; circuit tuning; micromechanical devices; thin film inductors; transformers; varactors; 3 to 7 GHz; 8 to 16 GHz; MEMS fabrication technology; Si; broadband analog varactors; high efficiency transformers; high resistivity silicon substrate; high-Q integrated passive elements; inductors; post-processing step; transformer coupling factor; transformer self-resonance frequency; varactor tuning range; vertical chip/interposer packaging; very high frequency varactors; Conductivity; Fabrication; Frequency; Inductors; Micromechanical devices; Packaging; Q factor; Transformers; Tuning; Varactors;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398158
