Title :
Systems engineering of RF system-on-wafer applications in SiGe [radar active electronic steered array example]
Author_Institution :
Sci. Applications Int. Corp., Arlington, VA, USA
Abstract :
For moderate performance radar and communications systems operating at Ku-band and above, the use of entire wafers individually comprised of a lattice of low-power transmit-receive (T/R) modules is an economically attractive alternative to traditional approaches employing microwave tubes or MMICs that are individually packaged. Silicon germanium is presently the technology of choice because it offers the potential of reasonable power levels and performance in the fT, fmax regime above 200 GHz, together with yields unreachable using III-V compound semiconductors, the ability to integrate RF and logic, and prices approaching those of conventional CMOS. In this paper, we examine systems-level performance for such systems, focusing on an active electronic steered array (AESA) in a Ku-band coherent radar. The dependence of system performance on yield and circuit performance variation is explored.
Keywords :
Ge-Si alloys; bipolar MIMIC; integrated circuit packaging; integrated circuit yield; low-power electronics; modules; phased array radar; semiconductor materials; wafer-scale integration; 200 GHz; AESA coherent radar; Ku-band systems; RF system-on-wafer; RF-logic integration; SiGe; circuit yield; low-power transmit-receive modules; millimeter wave bipolar IC; module lattice; monopulse radar; phased array radar; radar active electronic steered array; wafer scale integration; Electronics packaging; Germanium silicon alloys; Lattices; MMICs; Power generation economics; Power system economics; Radar applications; Radio frequency; Silicon germanium; Systems engineering and theory;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398164