Title :
A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies
Author :
Vaed, K. ; Eshun, E. ; Bolam, R. ; Stein, K. ; Coolbaugh, D. ; Ahlgren, D. ; Dunn, J.
Author_Institution :
IBM Semicond. R & D Center, Hopewell Junction, NY, USA
Abstract :
We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (<40 ppm/V) for a high-k MIM dielectric (4.5 fF/m2) that is both Al and Cu BEOL compatible. Also, we discuss the scaling of dielectric films to achieve excellent bias linearity, while attaining a capacitance density of 7.2 fF/m2.
Keywords :
MIM devices; dielectric materials; dielectric thin films; electric breakdown; integrated circuit reliability; leakage currents; mixed analogue-digital integrated circuits; optimisation; radiofrequency integrated circuits; thin film capacitors; BEOL compatibility; MIM capacitors; RFIC; TDDB; bias linearity; capacitance density; dielectric breakdown; dielectric film scaling; dielectric optimization; dielectric reliability; dielectric voltage linearity; leakage current; manufacturable high-k MIM dielectric; mixed-signal IC; Capacitance; High K dielectric materials; High-K gate dielectrics; Leakage current; Linearity; MIM capacitors; Manufacturing; Radio frequency; Tin; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398166
