Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems

Author

De Paola, F.M. ; de Vreede, L.C.N. ; Nanver, L.K. ; Rinaldi, N. ; Burghartz, J.N.

Author_Institution

Naples Univ., Italy

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

69

Lastpage

72

Abstract

A bipolar traveling wave amplifier has been implemented as a technology demonstrator in the argon-enhanced high resistivity silicon DIMES03 process technology. The improved active stage is based on an emitter-follower-cascode topology and facilitates 10 Gbit/s driver operation for a 13/15 GHz (f_T/f_MAX) transistor technology.

Keywords

argon; bipolar integrated circuits; driver circuits; microwave amplifiers; microwave transistors; network topology; optical communication equipment; silicon; travelling wave amplifiers; 10 Gbit/s; 13 GHz; 15 GHz; argon-enhanced DIMES03 process; bipolar traveling wave amplifier; driver operation; emitter-follower-cascode topology; high-resistivity silicon traveling wave amplifier; microwave transistor; optical communication systems; Argon; Bipolar transistors; Circuits; III-V semiconductor materials; Inductors; Optical amplifiers; Optical design; Optical fiber communication; Semiconductor optical amplifiers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398169

Filename

1398169