GPS low noise amplifier with high immunity to wireless jamming signals

Author

Gruson, F. ; Schulz, H. ; Golberg, H.-J. ; Schumacher, Hermann ; Spiegel, Solon J.

Author_Institution

Atmel Germany GmbH, Heilbronn, Germany

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

77

Lastpage

80

Abstract

A SiGe GPS low noise amplifier with power control option and high immunity to wireless jamming signals is presented. These novel features applied to Atmel´s ATR0610 GPS LNA allow significant power saving at the radio interface while meeting the out-of-band linearity requirements. The results show a noise figure of 2 dB, including the embedded pre-select filter, and an out-of-band IIP₃ above +8 dBm in the frequency range between 1.8 GHz and 2 GHz with 3 mA current consumption. The GPS system performance shows a GPS sensitivity below -141 dBm with 5 ms integration interval.

Keywords

Ge-Si alloys; Global Positioning System; UHF amplifiers; bipolar transistor circuits; interference suppression; intermodulation distortion; jamming; power consumption; power control; 1.8 to 2 GHz; 2 dB; 3 mA; 5 ms; Atmel ATR0610; GPS; Ge-Si; LNA; SiGe; bipolar transistor circuits; intermodulation distortion; low noise amplifier; out-of-band linearity requirements; performance; power control; power saving; radio interface; wireless jamming signal immunity; Filters; Germanium silicon alloys; Global Positioning System; High power amplifiers; Jamming; Linearity; Low-noise amplifiers; Noise figure; Power control; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398171

Filename

1398171