Title :
Radiation hardness study of high purity detector grade silicon
Author :
Reinhard, M. ; Rosenfeld, A. ; Alexiev, D. ; Khivrich, V.I. ; Varentsov, M.D. ; Litovchenko, P.G. ; Anokhin, A.I. ; Zinets, O.S.
Author_Institution :
Dept. of Phys., Wollongong Univ., NSW, Australia
Abstract :
The damage associated with neutron irradiated and gamma irradiated high purity silicon was investigated for material grown on the basis of different manufacturing technologies. Using Hall effect measurements, observation was made of the carrier type and concentration as a function of gamma and fast neutron dose. Observation of the radiation induced defects was made on neutron irradiated ion implanted silicon detectors using Optical Deep Level Transient Conductance Spectroscopy (ODLTCS). Using this method, the role of residual impurities present within the high purity silicon bulk was observed as a function of time to determine the role of room temperature annealing
Keywords :
Hall effect; annealing; carrier density; deep level transient spectroscopy; elemental semiconductors; gamma-ray effects; impurity-defect interactions; ion implantation; neutron effects; radiation hardening (electronics); silicon; silicon radiation detectors; Hall effect measurements; Si; carrier concentration; carrier type; fast neutron dose; gamma dose; gamma irradiation; high purity detector grade Si; manufacturing technologies; neutron irradiated ion implanted Si detectors; neutron irradiation; optical deep level transient conductance spectroscopy; radiation hardness; radiation induced defects; residual impurities; room temperature annealing; Hall effect; Impurities; Manufacturing; Neutrons; Optical detectors; Optical materials; Particle beam optics; Radiation detectors; Silicon radiation detectors; Spectroscopy;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610170
