• DocumentCode
    2623222
  • Title

    Low-frequency noise of 90 nm nFETs: hot-carrier degradation and deuterium effect

  • Author

    Erturk, M. ; Anna, R. ; Xia, T. ; Clark, W.F. ; Nexvton, K.M. ; Pekarik, J.J. ; Lamothe, C.J. ; Lacroix, M.R.

  • Author_Institution
    Dept. of Electr. Eng., Vermont Univ., Burlington, VT, USA
  • fYear
    2004
  • fDate
    8-10 Sept. 2004
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    We show that the low-frequency noise (LFN) of 90 nm nFETs can increase considerably due to hot-carrier stress. Measurements reveal noise degradation for both linear and saturation regions of operation. The use of deuterium processing retards the noise degradation and improves the noise lifetime by more than 20×.
  • Keywords
    deuterium; field effect transistors; semiconductor device noise; thermal noise; 90 nm; D2; FET; deuterium processing; hot-carrier degradation; low-frequency noise; nFET; noise degradation; Degradation; Deuterium; Hot carrier effects; Hot carriers; Hydrogen; Low-frequency noise; Noise measurement; Passivation; Semiconductor device noise; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
  • Print_ISBN
    0-7803-8703-1
  • Type

    conf

  • DOI
    10.1109/SMIC.2004.1398184
  • Filename
    1398184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2623222