Title :
Modeling of distortion in bipolar transistors - a review
Author :
Schroter, M. ; Sakalas, P. ; Tran, H.
Author_Institution :
Univ. of Technol., Dresden, Germany
Abstract :
An overview on modeling HF distortion in bipolar transistors is given. "Modeling" includes theoretical investigations, which are generally applicable to bipolar transistors, as well as compact models and their experimental verification for recent SiGe technologies. Also, 1D device simulation results provide additional insight into the mechanisms.
Keywords :
bipolar transistors; distortion; semiconductor device models; 1D device simulation; HF distortion modeling; SiGe; bipolar transistors; silicon-germanium technologies; theoretical investigations; Bipolar transistors; Communication systems; Electron devices; Fabrication; Frequency; Germanium silicon alloys; High definition video; Integrated circuit technology; Nonlinear distortion; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398185
