DocumentCode
2623259
Title
Boosting up performance of power SiGe HBTs using advanced layout concept
Author
Wang, Guogong ; Qin, Chao ; Jiang, Ningyue ; Ma, Zhenqiang
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
135
Lastpage
138
Abstract
We report an advanced power device layout structure, namely heat transfer counterbalanced (HTCB) layout, for designing power SiGe HBTs. It is shown that this new power device structure can substantially reduce adverse thermal effects of power devices without using ballasting resistors. Significantly improved power performances have been achieved from SiGe power HBTs employing the new layout concept.
Keywords
heat transfer; heterojunction bipolar transistors; power bipolar transistors; thermal resistance; SiGe; advanced power device layout structure; ballasting resistors; heat transfer counterbalanced layout; power HBT; power silicon-germanium HBT; power transistors; thermal effects; thermal resistance matrix; Boosting; Electronic ballasts; Fingers; Germanium silicon alloys; Heat transfer; Heterojunction bipolar transistors; Resistors; Silicon germanium; Temperature distribution; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN
0-7803-8703-1
Type
conf
DOI
10.1109/SMIC.2004.1398186
Filename
1398186
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