Title :
High-Q variable inductor using redistributed layers for Si RF circuits
Author :
Sugawara, Hirotaka ; Ito, Hiroyuki ; Okada, Kenichi ; Itoi, Kazuhisa ; Sato, Masakazu ; Abe, Hiroshi ; Ito, Tatsuya ; Masu, Kazuya
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We present a high-Q variable inductor using redistributed layers, whose inductance is of nH-order for GHz applications. The inductance can be varied by shielding the magnetic flux by means of a metal plate above the inductor. The metal plate is moved using a MEMS actuator. At 2 GHz, the measured inductance is varied from 4.80 nH to 2.27 nH, i.e., the variable range is 52.6%. The maximum value of quality factor is 50.1.
Keywords :
CMOS integrated circuits; Q-factor; UHF integrated circuits; inductance; inductors; magnetic shielding; microactuators; silicon; 2 GHz; CMOS circuits; MEMS actuator; RF circuits; Si; high-Q inductor; magnetic flux shielding; metal plate; quality factor; redistributed layers; variable inductor; Actuators; Circuits; Eddy currents; Inductance; Inductors; Magnetic flux; Micromechanical devices; Q factor; Radio frequency; Spirals;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398199
