Title :
19.1 A 128Gb MLC NAND-Flash device using 16nm planar cell
Author :
Helm, M. ; Jae-Kwan Park ; Ghalam, Ali ; GUO, Jun ; Chang wan Ha ; Cairong Hu ; Heonwook Kim ; Kavalipurapu, Kalyan ; Lee, Edward ; Mohammadzadeh, Ali ; Dan Nguyen ; Patel, Vaibhav ; Pekny, Ted ; Saiki, Bill ; Daesik Song ; Tsai, Jui-che ; Viajedor, Vimon
Author_Institution :
Micron, San Jose, CA, USA
Abstract :
The aggressive scaling of NAND Flash memory technology - one that is even outpacing Moore´s Law - has enabled very rapid cost-per-bit reduction, resulting in an explosion of systems utilizing this versatile memory technology. From removable media and personal music players to smart phones, tablets, and now personal computers and data center applications employing client and enterprise solid state drives (SSDs), NAND technology is making solid-state memory-based storage affordable.
Keywords :
NAND circuits; flash memories; MLC NAND-Flash device; Moore´s law; NAND Flash memory technology; NAND technology; cost-per-bit reduction; data center applications; personal computers; personal music players; planar cell; removable media; size 16 nm; smart phones; solid state drives; solid-state memory-based storage; storage capacity 128 Gbit; tablets; Bit error rate; Computer architecture; Flash memories; Interference; Microprocessors; Performance evaluation; Reliability;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757454
