DocumentCode
2623611
Title
Design of Stable Broadband Tunnel-Diode Amplifiers
Author
Lepoff, J.
Volume
64
Issue
1
fYear
1964
fDate
10-21 May 1964
Firstpage
165
Lastpage
168
Abstract
The design method described here establishes the desired gain at band edges and relies on the symmetry of the circuit reactance characteristic to maintain the gain over the entire band. A design for the 4 Gc to 5 Gc band resulted in a theoretical peak gain of 13 db when the gain at band edges was set at 11 db. Another design for the 5 Gc to 6 Gc range had a peak gain of 15 db.
Keywords
Admittance; Broadband amplifiers; Circuits; Cutoff frequency; Diodes; Impedance; Inductance; Passband; Shunt (electrical);
fLanguage
English
Publisher
ieee
Conference_Titel
PTGMTT International Symposium Digest, 1964
Conference_Location
Long Island, NY, USA
Type
conf
DOI
10.1109/PTGMTT.1964.1122448
Filename
1122448
Link To Document