Title :
Design of Stable Broadband Tunnel-Diode Amplifiers
Abstract :
The design method described here establishes the desired gain at band edges and relies on the symmetry of the circuit reactance characteristic to maintain the gain over the entire band. A design for the 4 Gc to 5 Gc band resulted in a theoretical peak gain of 13 db when the gain at band edges was set at 11 db. Another design for the 5 Gc to 6 Gc range had a peak gain of 15 db.
Keywords :
Admittance; Broadband amplifiers; Circuits; Cutoff frequency; Diodes; Impedance; Inductance; Passband; Shunt (electrical);
Conference_Titel :
PTGMTT International Symposium Digest, 1964
Conference_Location :
Long Island, NY, USA
DOI :
10.1109/PTGMTT.1964.1122448