Title :
RF MEMS resonator for CMOS back-end-of-line integration
Author :
Pacheco, Sergio ; Zurcher, Peter ; Young, Steven ; Weston, Don ; Daukshe, William
Author_Institution :
Microwave & Mixed-Signal Technol. Lab., Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
CMOS back-end-of-line (BEOL) compatible MEMS resonators were fabricated via a low-temperature process flow. The exural-mode resonator beams are made of a bi-layer consisting of a thin TaN and thick SiON 1m. DC measurements of pull-down voltage indicate limitations to operating voltages due to electric field breakdown across the bottom electrode to resonator beam gap. The RF response of the resonators shows resonant frequencies in the 11.0-11.6 MHz range with Q values of 2200.
Keywords :
CMOS analogue integrated circuits; low-temperature techniques; micromechanical resonators; microwave integrated circuits; voltage measurement; 11 to 11.6 MHz; BEOL; CMOS back-end-of-line integration; DC measurements; RF MEMS resonator; RF response; SiON; TaN; bi-layer; electric field breakdown; electrode to resonator beam gap; exural-mode resonator beams; low-temperature process flow; pull-down voltage; Breakdown voltage; CMOS process; Electric breakdown; Electric variables measurement; Electrodes; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Resonant frequency; Voltage measurement;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398203
