Title :
SOI voltage controlled ring oscillator
Author :
Venkataraman, Srinivasan ; Zhu, Xunyu ; Zhang, Yumin ; Hutchens, Chris
Author_Institution :
Oklahoma State Univ., Stillwater, OK, USA
Abstract :
Seven-stage and twenty-one-stage voltage controlled inverter-chain ring oscillators are fabricated in SOI 0.5 μm technology. It is found that the oscillation is very robust to the variation of power supply voltage, and there is no significant change of timing jitter. When the body voltages of the MOSFETs are swept, the oscillation frequency has a linear dependence.
Keywords :
MOS analogue integrated circuits; integrated circuit design; network analysis; silicon-on-insulator; timing jitter; voltage-controlled oscillators; 0.5 micron; MOSFET; SOI voltage controlled ring oscillator; Si; VCO; body voltages; inverter-chain oscillators; oscillation frequency; oscillator analysis; oscillator design; power supply voltage; seven-stage oscillators; timing jitter; twenty-one-stage oscillators; voltage controlled oscillators; CMOS technology; Circuits; Delay; Frequency; MOSFETs; Power supplies; Ring oscillators; Timing jitter; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398208
