Title :
Determination of basic parameters of ion implanted silica waveguides by dark mode spectroscopy method
Author :
Gazecki, J. ; Zamora, M. ; Reeves, G.K. ; Leech, P. ; Kubica, J.M.
Author_Institution :
Dept. of Commun. & Electr. Eng., R. Melbourne Inst. of Technol., Vic., Australia
Abstract :
The dark mode spectroscopy technique and mode curves were used to determine the refractive indices and thicknesses of silica waveguides. The guided and leaky modes were studied in step-index and ion implanted waveguides using a TE polarised laser beam of 632.8 nm and 833 nm wavelengths
Keywords :
ion implantation; measurement by laser beam; optical losses; optical testing; optical waveguides; refractive index; silicon compounds; thickness measurement; visible spectroscopy; 632.8 nm; 833 nm; Si; Si substrate; SiO2; TE polarised laser beam; basic parameter determination; dark mode spectroscopy; dispersion characteristics; guided modes; ion implanted SiO2 waveguides; leaky modes; mode curves; refractive indices; step-index waveguides; thickness; Laser beams; Laser modes; Optical coupling; Optical refraction; Optical surface waves; Optical waveguides; Refractive index; Silicon compounds; Spectroscopy; Waveguide lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610174
