• DocumentCode
    2623869
  • Title

    Determination of basic parameters of ion implanted silica waveguides by dark mode spectroscopy method

  • Author

    Gazecki, J. ; Zamora, M. ; Reeves, G.K. ; Leech, P. ; Kubica, J.M.

  • Author_Institution
    Dept. of Commun. & Electr. Eng., R. Melbourne Inst. of Technol., Vic., Australia
  • fYear
    1996
  • fDate
    8-11 Dec 1996
  • Firstpage
    495
  • Lastpage
    498
  • Abstract
    The dark mode spectroscopy technique and mode curves were used to determine the refractive indices and thicknesses of silica waveguides. The guided and leaky modes were studied in step-index and ion implanted waveguides using a TE polarised laser beam of 632.8 nm and 833 nm wavelengths
  • Keywords
    ion implantation; measurement by laser beam; optical losses; optical testing; optical waveguides; refractive index; silicon compounds; thickness measurement; visible spectroscopy; 632.8 nm; 833 nm; Si; Si substrate; SiO2; TE polarised laser beam; basic parameter determination; dark mode spectroscopy; dispersion characteristics; guided modes; ion implanted SiO2 waveguides; leaky modes; mode curves; refractive indices; step-index waveguides; thickness; Laser beams; Laser modes; Optical coupling; Optical refraction; Optical surface waves; Optical waveguides; Refractive index; Silicon compounds; Spectroscopy; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
  • Conference_Location
    Canberra, ACT
  • Print_ISBN
    0-7803-3374-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.1996.610174
  • Filename
    610174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2623869