Title :
Characterization and modeling of high frequency monolithic PIN diodes on SOI substrate
Author :
Duraz, E. ; Duvillaret, L. ; Ferrari, P. ; Coutaz, J.-L. ; Ghesquiers, J.-P. ; Estebe, E.
Author_Institution :
LAHC, Univ. de Savoie, Le Bourget Du Lac, France
Abstract :
We present high frequency measurements, simulation and modeling of PIN diodes on SOI substrate from 40 MHz to 40 GHz and from 74 to 114 GHz. Comparison between simulations and measurements brings to the fore a frequency dependent PIN diode capacitance with reverse bias. We show that the free carriers injected in the diode intrinsic channel induce a frequency dependent complex permittivity of the silicon substrate that is responsible for the frequency behaviour of the PIN diode capacitance. Moreover, no adjustable parameter is required in this model as all the required parameters can be easily measured.
Keywords :
capacitance; capacitance measurement; millimetre wave diodes; p-i-n diodes; permittivity measurement; silicon-on-insulator; substrates; 40 MHz to 40 GHz; 74 to 114 GHz; SOI substrate; complex permittivity; diode intrinsic channel; free carrier injection; frequency dependent capacitance; high frequency measurements; modeling; monolithic PIN diodes; reverse bias; silicon substrate; simulation; Capacitance measurement; Circuit simulation; Conductivity; Coplanar waveguides; Frequency dependence; Frequency measurement; Integrated circuit measurements; Permittivity measurement; Semiconductor diodes; Silicon;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398216
