Characterization and modeling of high frequency monolithic PIN diodes on SOI substrate

Author

Duraz, E. ; Duvillaret, L. ; Ferrari, P. ; Coutaz, J.-L. ; Ghesquiers, J.-P. ; Estebe, E.

Author_Institution

LAHC, Univ. de Savoie, Le Bourget Du Lac, France

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

255

Lastpage

257

Abstract

We present high frequency measurements, simulation and modeling of PIN diodes on SOI substrate from 40 MHz to 40 GHz and from 74 to 114 GHz. Comparison between simulations and measurements brings to the fore a frequency dependent PIN diode capacitance with reverse bias. We show that the free carriers injected in the diode intrinsic channel induce a frequency dependent complex permittivity of the silicon substrate that is responsible for the frequency behaviour of the PIN diode capacitance. Moreover, no adjustable parameter is required in this model as all the required parameters can be easily measured.

Keywords

capacitance; capacitance measurement; millimetre wave diodes; p-i-n diodes; permittivity measurement; silicon-on-insulator; substrates; 40 MHz to 40 GHz; 74 to 114 GHz; SOI substrate; complex permittivity; diode intrinsic channel; free carrier injection; frequency dependent capacitance; high frequency measurements; modeling; monolithic PIN diodes; reverse bias; silicon substrate; simulation; Capacitance measurement; Circuit simulation; Conductivity; Coplanar waveguides; Frequency dependence; Frequency measurement; Integrated circuit measurements; Permittivity measurement; Semiconductor diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398216

Filename

1398216