RF small signal modeling of tri-gate Ω MOSFETs implemented on bulk Si wafers

Author

Tak, Nam-Kyun ; Lee, Jong-Ho

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

266

Lastpage

269

Abstract

The RF characteristics of the tri-gate Ω MOSFETs were studied firstly by using 3-dimensional device simulator. Small signal model parameters were extracted using an equivalent circuit and compared with those of a planar MOSFET. The Ω MOSFET shows lower sensitivity of g_mb and V_T with substrate bias than the planar device. The tri-gale Ω MOSFETs shows a higher cut-off frequency at a lower drain current.

Keywords

CMOS integrated circuits; MOSFET; equivalent circuits; radiofrequency integrated circuits; semiconductor device models; MOS technology; RF small signal modeling; Si; body-tied finFET; bulk Si wafers; cut-off frequency; device simulator; drain current; equivalent circuit; planar MOSFET; small signal model parameters; substrate bias; tri-gate omega MOSFET; CMOS technology; Circuit simulation; Equivalent circuits; FinFETs; Integrated circuit modeling; MOSFETs; RF signals; Radio frequency; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398220

Filename

1398220

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2623974