Gallium arsenide on insulator by electrostatic bonding

Summary form only given. A technique for bonding GaAs to silicon by depositing a thin phosphosilicate glass (PSG) layer on the surface of the polished GaAs member, resulting in a GaAs-Si structure, is described. The PSG layer is deposited by the chemical vapor deposition method, which is capable of controlling film composition and thickness. Scanning electron microscopy (SEM) has been used to view the cross-section image of the GaAs-PSG-Si structure. An etch-back process is used to produce GaAs-on-insulator whose electrical quality is equal to that of bulk GaAs. Bonds created during rapid annealing are mechanically strong enough to withstand the mechanical and/or chemical thinning of the GaAs wafer to the desired thickness and subsequent device processing