Title :
A small-signal, RF simulation study of multiple-gate and silicon-on-insulator MOSFET devices
Author :
Breed, Aniket A. ; Roenker, Kenneth P.
Author_Institution :
Dept. of Electr. & Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA
Abstract :
Because of their superior scaling characteristics and reduced short channel effects, multi-gate MOSFETs are being considered for replacing conventional planar silicon MOSFETs in digital applications. At the same time, improvements in the high frequency capabilities of conventional MOSFETs have made them increasingly attractive for RF applications. The paper examines the performance capabilities of multi-gate MOSFETs in the RF regime using a simulation study of their small-signal behavior. Three dimensional numerical simulations have been performed to investigate the high frequency performance of two of the most promising multigate devices, i.e. the finFET and the trigate transistor. The trigate transistor has been found to exhibit a higher transconductance, small signal current gain and unilateral power gain as compared to the finFET, as well as a higher cutoff frequency, fT, and maximum frequency of oscillation, fMAX. Peak fT of 42 and 51 GHz and peak fMAX of 183 and 228 GHz were obtained for the finFET and trigate transistors, respectively, for a gate length of 50 nm.
Keywords :
MOSFET; amplification; circuit simulation; millimetre wave field effect transistors; semiconductor device models; silicon-on-insulator; 183 GHz; 228 GHz; 42 GHz; 50 nm; 51 GHz; RF simulation study; Si; cutoff frequency; finFET; gate length; maximum oscillation frequency; multi-gate MOSFET; multiple-gate MOSFET devices; planar silicon MOSFET; scaling characteristics; silicon-on-insulator MOSFET devices; small signal current gain; small-signal simulation study; transconductance; trigate transistor; unilateral power gain; CMOS technology; Cutoff frequency; FETs; FinFETs; MOSFET circuits; Numerical simulation; Radio frequency; Silicon on insulator technology; Transconductance; Transistors;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398227