Microwave Transistor Amplifier Design

The high frequency transistor equivalent circuit applicable for our consideration is shown in Figure 1. Typical values of the parameters for a state-of-the-art silicon npn microwave transistor are given below: r´/sub b/= base spreading resistance /spl ap/ 10/spl Omega/ C/sub c/ = collector to base capacitance /spl ap/ 0.7 pf r/sub e/ = emitter resmtance /spl ap/ 26/ I/sub E/(ma)/spl Omega/ /spl ap/ 1.3/spl Omega/ at 20 ma C/sub se/ = emitter storage capacitance /spl ap/1/2/spl pi/f/subT/r/sub e/ /spl ap/ 60 pf typ., where f/sub T/ is the frequency at which the common emitter current gain is unity.