Synthesized high-impedance CMOS thin-film transmission line

Author

Wu, Hsien-Hung ; Wu, Hsien-Shun ; Tzuang, Ching-Kuang C.

Author_Institution

Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

302

Lastpage

304

Abstract

A synthetic quasi-TEM CMOS transmission line (TL) of wide range characteristic impedance from 58.3 to 95 Ω is presented for miniaturization of CMOS RFIC. The synthetic TL consists of unit cells made of complementary-conducting strips (CCS) and connecting arm for signal interface residing on the M5 and M1 metal layers of a typical 0.25 μm 1P5M CMOS process. Measured results and theoretical data indicate that the loss per guiding wavelength of the meandered CCS TL is about 13% lower than that of the meandered microstrip of characteristic impedance 86.4 Ω at 40 GHz.

Keywords

CMOS integrated circuits; electric impedance; millimetre wave integrated circuits; strip lines; thin film circuits; transmission lines; 0.25 micron; 40 GHz; CMOS RFIC; CMOS transmission line; characteristic impedance; complementary-conducting strips; connecting arm; high-impedance CMOS thin-film transmission line; high-impedance transmission line; meander transmission line; quasi-TEM transmission line; Carbon capture and storage; Impedance; Joining processes; Radiofrequency integrated circuits; Signal processing; Signal synthesis; Strips; Transistors; Transmission line theory; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398229

Filename

1398229