• DocumentCode
    2624151
  • Title

    Low-Level Limiting Utilizing Impact Ionization in Bulk Germanium at 4.2/spl deg/K

  • Author

    Heinz, W.W. ; Okwit, S.

  • Volume
    65
  • Issue
    1
  • fYear
    1965
  • fDate
    5-7 May 1965
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    Low-level garnet limiters operating in the coincidence region have previously been reported at 4.2/spl deg/K. These devices, however, operate only within an octave frequency range, which is a function of the 4/spl pi/M/sub s/. For YIG at 4.2/spl deg/K, for example, this frequency range is 2.3 to 4.6 gc. This paper describes the application of impact ionization in bulk semiconductors to obtain low-level limiting, for which no such frequency limit exists in the microwave range.
  • Keywords
    Bandwidth; Breakdown voltage; Dynamic range; Electric breakdown; Frequency; Germanium; Impact ionization; Instruments; Laboratories; Stripline;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    G-MTT Symposium Digest, 1965
  • Conference_Location
    Clearwater, Florida, USA
  • Type

    conf

  • DOI
    10.1109/GMTT.1965.1122481
  • Filename
    1122481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2624151