DocumentCode :
2624151
Title :
Low-Level Limiting Utilizing Impact Ionization in Bulk Germanium at 4.2/spl deg/K
Author :
Heinz, W.W. ; Okwit, S.
Volume :
65
Issue :
1
fYear :
1965
fDate :
5-7 May 1965
Firstpage :
89
Lastpage :
92
Abstract :
Low-level garnet limiters operating in the coincidence region have previously been reported at 4.2/spl deg/K. These devices, however, operate only within an octave frequency range, which is a function of the 4/spl pi/M/sub s/. For YIG at 4.2/spl deg/K, for example, this frequency range is 2.3 to 4.6 gc. This paper describes the application of impact ionization in bulk semiconductors to obtain low-level limiting, for which no such frequency limit exists in the microwave range.
Keywords :
Bandwidth; Breakdown voltage; Dynamic range; Electric breakdown; Frequency; Germanium; Impact ionization; Instruments; Laboratories; Stripline;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
G-MTT Symposium Digest, 1965
Conference_Location :
Clearwater, Florida, USA
Type :
conf
DOI :
10.1109/GMTT.1965.1122481
Filename :
1122481
Link To Document :
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