• DocumentCode
    2624156
  • Title

    Effect of metal wave function on the IV characteristics of MOS solar cell

  • Author

    Bhatnagar, P.K. ; Jain, Kalpana

  • Author_Institution
    Dept. of Electron. Sci., Delhi Univ., India
  • fYear
    1989
  • fDate
    15-18 Oct 1989
  • Abstract
    Results are presented which indicate that the metal wave function penetration effect cannot be neglected in calculating accurate I-V characteristics. The authors show a comparison between the variations of potential with x/d for different values of oxide layer thickness with and without considering the effect of metal wave penetration. On calculating the change in V oc for δ=10 A0 for a typical MOS solar cell it is observed that δ Voc comes out to be 20.18 mV, which is approximately 4% of the total V oc. This points to a significant mutual wave function effect
  • Keywords
    solar cells; IV characteristics; MOS solar cell; metal wave function penetration effect; mutual wave function effect; oxide layer thickness; Bismuth; Boundary conditions; Electrooptic effects; Equations; Gravity; Permittivity; Photovoltaic cells; Tunneling; Voltage; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 1989. INTELEC '89. Conference Proceedings., Eleventh International
  • Conference_Location
    Florence
  • Type

    conf

  • DOI
    10.1109/INTLEC.1989.88363
  • Filename
    88363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2624156