RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects

Author

Liu, Yi ; Sadat, Anwar ; Yu, Chuanzhao ; Yuan, J.S.

Author_Institution

Dept. of Electr. Eng., Central Florida Univ., Orlando, FL, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

309

Lastpage

310

Abstract

Hot carrier and soft breakdown stress on pMOS RF devices has been examined. The cut-off frequency and the S-parameters degrade with stress. The measured threshold voltage shifts negatively and mobility decreases after stress. It is our understanding that this is the first attempt to investigate hot carrier and soft breakdown effects on RF performance of pMOS transistors and first reporting of negative shift in threshold voltage.

Keywords

MOSFET; S-parameters; carrier mobility; hot carriers; microwave transistors; semiconductor device breakdown; 0 to 10 GHz; RF performance degradation; S-parameters; cut-off frequency; hot carrier stress; mobility; pMOS transistors; soft breakdown stress; threshold voltage; Cutoff frequency; Degradation; Electric breakdown; Hot carriers; MOSFETs; Radio frequency; Scattering parameters; Stress; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398231

Filename

1398231

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2624162