Title :
14 GHz MEMS 4-bit phase shifter on silicon
Author :
Kingsley, Nickolas ; Kirby, Pete ; Ponchak, George ; Papapolymerou, John
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In this abstract we describe the work in progress on a 4-bit coplanar waveguide (CPW) MEMS phase shifter simulated, fabricated, and measured at 14 GHz on 400 μm high-resistivity silicon (εr=11.7). Simulated results using a full wave simulator predict a return loss better than 19 dB and isolation better than -0.1 dB for a one bit phase shifter using perfectly conducting lines. Measurement results for single MEMS switches have shown -22 dB return loss and -0.095 dB isolation in the UP (not activated) state and -0.83 dB return loss and -14.5 dB isolation in the DOWN (activated) state. It has also been shown that the single bit phase shifters exhibit accurate phase shifts, but higher than expected loss.
Keywords :
circuit simulation; coplanar waveguide components; electrical resistivity; elemental semiconductors; losses; micromechanical devices; microwave phase shifters; semiconductor device models; semiconductor device testing; silicon; -0.83 dB; -19 dB; -22 dB; 1 bit; 14 GHz; 400 micron; CPW; DOWN state; MEMS phase shifter on silicon; Si; UP state; activated state; coplanar waveguide MEMS phase shifter; full wave simulator; high-resistivity silicon; isolation; perfectly conducting lines; phase shifter measurement; return loss; solid-state switches; unactivated state; Bridge circuits; Coplanar waveguides; Fabrication; Micromechanical devices; Microswitches; Phase shifters; Predictive models; Silicon; Solid state circuits; Switches;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398236