Foreword

fYear

2006

fDate

13-15 June 2006

Abstract

The following topics are dealt with: advanced high K metal gate stacks integration; advanced flash memory; advanced gate dielectric reliability; advanced dynamic memory; non-volatile trapped charge memory; multigate FET; strain enhanced CMOS; high speed memory technology; mobility enhancement on process induced strain; non-volatile FinFet flash memory; advanced FUSI gates stack; analog/RF/mixed-signal VLSI; advanced interconnect technology; alternative non-volatile memory; novel architectures and process integration; strain enhanced high performance PMOS devices; advanced CMOS technology; advanced high K stacks; front-end of line processing; novel gate stacks engineering and characterization; and advanced source/drain engineering

Keywords

CMOS integrated circuits; MOSFET; VLSI; dielectric properties; field effect transistors; flash memories; high-speed techniques; interconnections; reliability; FUSI gates stack; RF VLSI; analog VLSI; dynamic memory; gate dielectric reliability; gate stacks characterization; gate stacks engineering; high K metal gate stacks integration; high speed memory technology; interconnect technology; line processing; mixed-signal VLSI; mobility enhancement; multigate FET; nonvolatile FinFet flash memory; nonvolatile trapped charge memory; process induced strain; process integration; source/drain engineering; strain enhanced CMOS; strain enhanced high performance PMOS devices;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705187

Filename

1705187