The computer modeling of distribution of In, As and nanostructures on depth in Si and SiO2

Nano-size InAs crystallites were synthesized in matrixes of crystalline silicon with high-dose “hot” implantation and implantation at a room temperature of As and In ions and post-implant high-temperature annealing. For the analysis of distribution of impurities Rutherford Backscattering Spectrometry with Channelling (RBS/C) method was used. For determination of structural characteristics of the implanted layers transmission electron microscopy and electron microscopy of cross-section section were used. Features of processes of redistribution of impurity on depth of a crystal, and also influence of conditions of the ion implantation and subsequent heat treatment on structural nanoclusters characteristics are discussed.