Title :
Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric
Author :
Alshareef, H.N. ; Harris, H.R. ; Wen, H.-C. ; Park, C.S. ; Huffman, C. ; Choi, K. ; Luan, H.F. ; Majhi, P. ; Lee, B.H. ; Jammy, R. ; Lichtenwalner, D.J. ; Jur, J.S. ; Kingon, A.I.
Author_Institution :
SEMATECH, Austin, TX
Abstract :
We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La2O3, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with Lg down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO2 mobility, and Tinv ~1.6 nm
Keywords :
MOSFET; conduction bands; dielectric materials; hafnium compounds; lanthanum; lanthanum compounds; molecular beam epitaxial growth; silicon compounds; thermal stability; work function; 0.25 V; La-HfSiO; La-incorporated HfSiO dielectric; La2O3; MBE; N-metal gate MOSFET; PVD; SiO2; conduction band edge; metal gate effective work function; surface passivation; thermally stable N-metal process; threshold voltage; Annealing; Atherosclerosis; Dielectrics; Fabrication; Instruments; Jamming; MOSFETs; Materials science and technology; Molecular beam epitaxial growth; Thermal conductivity;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705190
