Title :
23.1 A 0.15V-input energy-harvesting charge pump with switching body biasing and adaptive dead-time for efficiency improvement
Author :
Jungmoon Kim ; Mok, Philip K. T. ; Chulwoo Kim
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Design of low-voltage and efficient energy-harvesting circuits is becoming increasingly important, particularly, for autonomous systems. Since the amount of energy that can be harvested from the surrounding environment is limited, the available output voltage of a harvester is low. Therefore, the design of a low-input-voltage (low-VIN) up-converter is critical to self-powered systems [1-3]. Moreover, the form factor is very constrained in applications such as wearable electronic devices and sensor networks. Recently, low-VIN charge pumps (CPs) for energy harvesting has been compared with DC-DC converters using a large inductor [1-3]. CPs introduced in [1] and [2] use the advanced process technology to push VIN down to the subthreshold region. The CP in [1] introduces a forward-body-biasing (FBB) technique, which improves the voltage conversion efficiency (VCE) for low VIN but shows poor power conversion efficiency (PCE). The CP in [2] achieves the lowest operation voltage. However, the design with a 10-stage CP provides low output power. This paper presents a CP with switching-body-biasing (SBB), adaptive-dead-time (AD), and switch-conductance (SW-G) enhancement techniques to improve the PCE for low VIN as well as to extend the maximum load current.
Keywords :
DC-DC power convertors; charge pump circuits; energy harvesting; inductors; low-power electronics; DC-DC converters; PCE; SW-G; VCE; adaptive dead time; adaptive dead-time; efficiency improvement; energy harvesting charge pump; form factor; forward body biasing technique; low-input-voltage up-converter; power conversion efficiency; self-powered systems; switch conductance; switching body biasing; voltage 0.15 V; voltage conversion efficiency; Charge pumps; Clocks; Delays; Energy harvesting; Niobium; Switches; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757484