Radiation damage effects on epitaxial silicon devices for the PANDA hybrid pixel detector

The aim of this work is to report first results of radiation effects induced by neutrons on epitaxial silicon devices with high resistivity. The epitaxial silicon material has been widely studied over the last few years (RD50…) and displays interesting performance regarding its eventual use in the PANDA pixel detector. Radiation damage measurement of some parameters of epitaxial diodes with three different epitaxial layer thickness have been performed for fluences corresponding to 1, 3 and 10 years of PANDA lifetime.