• DocumentCode
    2624446
  • Title

    Radiation damage effects on epitaxial silicon devices for the PANDA hybrid pixel detector

  • Author

    Braghieri, A. ; Busso, L. ; Calvo, D. ; De Remigis, P. ; Jaeckel, R. ; Montagna, P. ; Morra, O. ; Wheadon, R.

  • Author_Institution
    INFN - Sezione di Pavia, ITALY
  • fYear
    2008
  • fDate
    19-25 Oct. 2008
  • Firstpage
    2539
  • Lastpage
    2541
  • Abstract
    The aim of this work is to report first results of radiation effects induced by neutrons on epitaxial silicon devices with high resistivity. The epitaxial silicon material has been widely studied over the last few years (RD50…) and displays interesting performance regarding its eventual use in the PANDA pixel detector. Radiation damage measurement of some parameters of epitaxial diodes with three different epitaxial layer thickness have been performed for fluences corresponding to 1, 3 and 10 years of PANDA lifetime.
  • Keywords
    Conductivity; Diodes; Displays; Epitaxial layers; Neutrons; Radiation detectors; Radiation effects; Silicon devices; Silicon radiation detectors; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
  • Conference_Location
    Dresden, Germany
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-2714-7
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2008.4774873
  • Filename
    4774873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2624446