DocumentCode :
2624483
Title :
Radiation tolerance of epitaxial silicon after fast hadron irradiation
Author :
Khomenkov, V. ; Bisello, D. ; Candelori, A. ; Kramberger, G. ; Moll, M.
Author_Institution :
Hamburg University, Luruper Chaussee 149, 22761, Germany
fYear :
2008
fDate :
19-25 Oct. 2008
Firstpage :
2550
Lastpage :
2552
Abstract :
Radiation hardness of particle detectors based on thick epitaxial silicon layer (150 μm)has been studied in terms of operating voltage, leakage current and charge collection efficiency. The operability of such devices has been confirmed after irradiation with the fast hadrons beyond the equivalent 1 MeV neutrons fluence values of 1015cm−2.
Keywords :
Annealing; Conductivity; Inductors; Leakage current; Neutrons; Protons; Radiation detectors; Silicon; Space charge; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
ISSN :
1095-7863
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2008.4774876
Filename :
4774876
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2624483
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