Simulation of irradiated edgeless detectors

In this work, results of simulation of irradiated edgeless detectors for close to beam experiments are presented. The charge collection efficiency at the sensitive cut for minimal ionizing particles was numerically simulated in the frame of amorphous silicon model of heavily damaged cut surface. It is shown that the charge collection reduction for non- irradiated detectors is expected in the region adjacent to the cut of 50 μm width that well correlates to the experiment. The detector irradiation reduces the collected charge at the bulk and at the surface in close extent. In irradiated detectors however the charge collected within the layer which is in direct contact with the damaged cut may be higher than before irradiation.