Title :
Vertex Channel Field Effect Transistor (VC-FET) Technology Featuring High Performance and Highly Manufacturable Trench Capacitor DRAM
Author :
Kido, M. ; Kito, M. ; Katsumata, R. ; Kondo, M. ; Ito, S. ; Matsuo, K. ; Miyano, K. ; Mizushima, I. ; Sato, M. ; Tanaka, H. ; Yasutake, H. ; Nagata, Y. ; Hoshino, T. ; Aoki, N. ; Aochi, H. ; Nitayama, A.
Author_Institution :
SoC Res. & Dev. Center, Toshiba Corp., Yokohama
Abstract :
Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first time. On-current of VC-FETs is much higher than that of conventional planar devices with keeping sufficiently small off-current. They achieve 15% or much smaller propagation delay (Tpd) of fan-out 3 than planar devices. Furthermore, 1.6 times of on-current as a planar array transistor is achieved by the combination of VCAT and P+poly gate without degradation of retention characteristics
Keywords :
DRAM chips; field effect memory circuits; planar array transistor; trench capacitor DRAM; vertex channel field effect transistor; Capacitors; Degradation; Etching; FETs; Human computer interaction; Manufacturing processes; Random access memory; Semiconductor device manufacture; Surface resistance; Virtual colonoscopy;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705204
