Liquid nitrogen CMOS for computer applications

Author

Gaensslen, Fritz H. ; Meyer, David D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1991

fDate

14-16 Oct 1991

Firstpage

4

Lastpage

8

Abstract

Past and present development in the field of operating microelectronic computer circuits at liquid nitrogen temperature (LNT) are reviewed. To assess the potential of this technology, its advantages and disadvantages are discussed. The fact that devices and materials behave generically better at low temperature will have some bearing on the ultimate attainable technology limits. The optimized complementary metal oxide semiconductor (CMOS) system advantages at LNT are analyzed. The basic conclusion is that the liquid nitrogen CMOS (LNCMOS) is a viable system technology for commercial and military computer systems

Keywords

CMOS integrated circuits; VLSI; digital integrated circuits; integrated circuit technology; 77 K; LNCMOS; N₂; liquid nitrogen CMOS; liquid nitrogen temperature; microelectronic computer circuits; optimized complementary metal oxide semiconductor; technology limits; CMOS technology; Circuits; Computer applications; Large-scale systems; MOS devices; Microelectronics; Nitrogen; Semiconductor device packaging; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Design: VLSI in Computers and Processors, 1991. ICCD '91. Proceedings, 1991 IEEE International Conference on

Conference_Location

Cambridge, MA

Print_ISBN

0-8186-2270-9

Type

conf

DOI

10.1109/ICCD.1991.139827

Filename

139827