Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics

Author

Kil, Deok-Sin ; Song, Han-Sang ; Lee, Kee-Jeung ; Hong, Kwon ; Kim, Jin-Hyock ; Park, Ki-Seon ; Yeom, Seung-Jin ; Roh, Jae-Sung ; Kwak, Noh-Jung ; Sohn, Hyun-Chul ; Kim, Jin-Woong ; Park, Sung-Wook

Author_Institution

R&D Div., Hynix Semicond. Inc., Kyoungki

fYear

0

fDate

0-0 0

Firstpage

38

Lastpage

39

Abstract

New ZrO₂/Al₂O₃/ZrO₂ (ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO₂ and amorphous Al ₂O₃. Thus prepared ZAZ TFT capacitors showed very small Tox.eq value of 6.3Aring and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TFT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production

Keywords

DRAM chips; capacitors; dielectric thin films; sapphire; titanium compounds; zirconium compounds; 45 nm; DRAM; HfO₂; TIT capacitors; TiN-ZrO₂-Al₂O₃-ZrO₂-TiN; ZAZ dielectric film; Aluminum oxide; Amorphous materials; Capacitors; Dielectric films; Hafnium oxide; Leakage current; Random access memory; Robustness; Thin film transistors; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705205

Filename

1705205