DocumentCode
2624784
Title
Performance Characteristics of CW Silicon and GaAs Avalanche Diode Oscillators
Author
Brand, F.A. ; Higgins, V.J. ; Baranowski, J.J.
Volume
66
Issue
1
fYear
1966
fDate
16-19 May 1966
Firstpage
23
Lastpage
27
Abstract
Recently there have been numerous reports of coherent microwave generation from p-n junction structures when biased into the avalanche region and situated in a suitable circuit environment. However, little quantitative data on the performance of these devices in various circuit configurations have been available . Further, nothing has been presented concerning their application to specific system problems; nor has any data regarding their reliability been documented to date.
Keywords
Diodes; Frequency; Gallium arsenide; Local oscillators; Noise figure; Noise generators; Noise measurement; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
G-MTT International Symposium Digest, 1966
Conference_Location
Palo Alto, CA, USA
Type
conf
DOI
10.1109/GMTT.1966.1122520
Filename
1122520
Link To Document