Title :
A Novel Non-Volatile Memory Cell Using a Gated-Diode Structure with a Trapping-Nitride Storage Layer
Author :
Tsai, W.J. ; Ou, T.F. ; Kao, H.L. ; Lai, E.K. ; Liao, Y.Y. ; Yeh, C.C. ; Wang, Tahui ; Ku, Joseph ; Lu, Chih-Yuan
Author_Institution :
Technol. Dev. Center, Macronix Int. Co., Ltd., Hsin-Chu
Abstract :
A novel trapping-nitride-based non-volatile memory cell by using a gated-diode structure is proposed. Fowler-Nordheim (FN) electron injection and band-to-band-tunneling induced hot-hole (BTBT HH) injection are utilized as the erase and program methods, respectively. BTBT current modulated by the trapped charges is the sensing signal to distinguish the cell´s bit state. This cell structure overcomes the channel-length related drawbacks in convention field-effect-transistor (FET)-based cells. Furthermore, its array architecture and bias methods can relieve the complex word-line (WL) bias schemes and program-inhibit techniques used in NAND-type arrays. Good program/erase characteristics and reliability are also presented
Keywords :
circuit reliability; field effect transistor circuits; hole traps; semiconductor storage; tunnelling; Fowler Nordheim electron injection; band to band tunneling current; gated diode structure; hot hole injection; non volatile memory cell; trapping nitride storage layer; Costs; Doping profiles; Electron traps; Fabrication; Flash memory; Hot carriers; Nonvolatile memory; P-n junctions; Scalability; Voltage;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705207
