Scalable eSiGe S/D Technology with Less Layout Dependence for 45-nm Generation

Author

Ota, Kaoru ; Sanuki, T. ; Yahashi, K. ; Miyanami, Y. ; Matsuo, Kenshi ; Idebuchi, J. ; Moriya, M. ; Nakayama, Keisuke ; Yamaguchi, Ryo ; Tanaka, Hiroya ; Yamazaki, Tsutomu ; Terauchi, S. ; Horiuchi, A. ; Fujita, S. ; Mizushima, Ichiro ; Yamasaki, Hirofumi

Author_Institution

SONY Corp., Kanagawa

fYear

0

fDate

0-0 0

Firstpage

64

Lastpage

65

Abstract

We developed a less layout-dependent epitaxially grown SiGe (eSiGe) source/drain (S/D) technique for pFET. We found that the effective stressor region of eSiGe existed only near the channel and that the volume effect of eSiGe was small. On the basis of this mechanism, a new recess RIE and a new epitaxial growth technology were developed, so that the gate-pitch dependence, S/D length dependence and channel width dependence were extremely reduced. In addition, we succeeded in increasing the drive current by improving the eSiGe structure and the impurity profile. We also obtained a high drive current of 750 muA/mum at V_dd=1V, I_off=100nA/mum

Keywords

MOSFET; epitaxial growth; nanotechnology; semiconductor epitaxial layers; 1 V; 45 nm; SiGe; epitaxial growth technology; pFET; recess RIE; source/drain technique; Companies; Epitaxial growth; Etching; Germanium silicon alloys; Impurities; Large scale integration; Manufacturing processes; Semiconductor device manufacture; Silicon germanium; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705218

Filename

1705218